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B31N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IIRFB31N20D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB31N20

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB31N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB31N20D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB31N20D

SEMICONDUCTORS

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IRFB31N20DPBF

HighFrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB31N20DPBF

HighFrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFB31N20DPBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)max=0.082廓,ID=31A)

Applications HighFrequencyDC-DCconverters Lead-Free  Benefits LowGatetoDraintoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS31N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS31N20D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS31N20DPBF

HighFrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS31N20DPBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)max=0.082廓,ID=31A)

Applications HighFrequencyDC-DCconverters Lead-Free  Benefits LowGatetoDraintoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFS31N20DTRLP

HighFrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL31N20D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFSL31N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL31N20DPBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)max=0.082廓,ID=31A)

Applications HighFrequencyDC-DCconverters Lead-Free  Benefits LowGatetoDraintoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFSL31N20DPBF

HighFrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
IR
ROHS全新原装
TO-263
9782
原装现货在线咨询样品※技术支持专业电子元器件授权
询价
IOR
2017+
TO263-2.5
34589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
IR
05+
TO-263
1
询价
IR
23+
TO263
6670
专业优势供应
询价
IR
2018+
TO263
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
23+
N/A
46580
正品授权货源可靠
询价
VB
2019
TO-263-D2PAK
55000
绝对原装正品假一罚十!
询价
22+
5000
询价
IR
22+
TO263
6000
终端可免费供样,支持BOM配单
询价
IR
2023+环保现货
TO262
10
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
更多FS31N20D供应商 更新时间2024-5-3 13:39:00