FS10VS-12

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................0.94Ω ●ID......................................................................................

FS10VS-12

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................0.94Ω ●ID......................................................................................

FS10VS-12

MITSUBISHI Nch POWER MOSFET

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................0.94Ω ●ID......................................................................................

FS10VS-12

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.94Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FS10VS-12_15

HIGH-SPEED SWITCHING USE

FK10VS-12

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................1.18Ω ●ID.......................................................................................

FK10VS-12

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................1.18Ω ●ID.......................................................................................

FK10VS-12

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon