FS10VS-10

HIGH-SPEED SWITCHING USE

●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.90Ω ●ID..........................................................................................10A APPLICATION S

FS10VS-10

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.90Ω ●ID..........................................................................................10A APPLICATION S

FS10VS-10

MITSUBISHI Nch POWER MOSFET

●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.90Ω ●ID..........................................................................................10A APPLICATION S

FS10VS-10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.90Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FS10VS-10_15

HIGH-SPEED SWITCHING USE

FK10VS-10

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS...............................................................................500V ●rDS(ON)(MAX).............................................................1.13Ω ●ID........................................................................................

FK10VS-10

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS...............................................................................500V ●rDS(ON)(MAX).............................................................1.13Ω ●ID........................................................................................

FK10VS-10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon