FQU24N08资料使用说明书库存现货仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FQU24N08	文件：707.6 Kbytes Page：9 Pages	80V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU24N08	文件：730.4 Kbytes Page：9 Pages	80V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU24N08	文件：331.43 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=19.6A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB24N08	文件：719.74 Kbytes Page：9 Pages	80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD24N08	文件：707.6 Kbytes Page：9 Pages	80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD24N08	文件：730.4 Kbytes Page：9 Pages	80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD24N08	文件：305.95 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=19.6A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD24N08TF	文件：707.6 Kbytes Page：9 Pages	80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD24N08TM	文件：730.4 Kbytes Page：9 Pages	80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI24N08	文件：719.74 Kbytes Page：9 Pages	80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP24N08	文件：711.79 Kbytes Page：8 Pages	80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP24N08	文件：302.93 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
KSM24N08	文件：1.98366 Mbytes Page：7 Pages	80VN-ChannelMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
KSMD24N08	文件：1.61709 Mbytes Page：8 Pages	80VN-ChannelMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
KSMU24N08	文件：1.61709 Mbytes Page：8 Pages	80VN-ChannelMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

详细参数

型号：
FQU24N08
功能描述：
MOSFET
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	FQU24N08	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
无锡固电半导体股份有限公司	FQU24N08	isc	2024	IPAK/TO-251	175	国产品牌isc,可替代原装	询价
深圳市百诺芯科技有限公司	FQU24N08TU	FAIRCHILD/仙童	23+	I-PAKTO-251	24190	原装正品代理渠道价格优势	询价
深圳市百域芯科技有限公司	FQU24N08TU	FAIRCHILD/仙童	21+	I-PAKTO-251	30000	优势供应实单必成可13点增值税	询价
深圳市瑞卓芯科技有限公司	FQU24N08TU	FAIRCHILD/仙童	22+	I-PAKTO-251	18000	原装正品	询价
深圳市华集芯实业有限公司	FQU24N08TU	FAIRCHILD/仙童	23+	I-PAKTO-251	6000	公司十几年如一日,只做原装正品,优势渠道保证每一片	询价
贸泽芯城（深圳）电子科技有限公司	FQU25N06	FAIRCHILD/仙童	21+ROHS	TO-251	980000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市特顺芯科技有限公司	FQU2N100	FAIRCHIL	08+(pbfree)	TO-251	8866		询价
深圳市勤思达科技有限公司	FQU2N100	仙童	23+	TO-251	8500	全新原装现货,公司只做原装。	询价
深圳市锦喆鸿电子有限公司	FQU2N100	FAIRCHI	21+	TO-251	12588	原装正品,自己库存假一罚十	询价

更多FQU24N08供应商更新时间2024-5-15 10:30:00

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