首页 >FQT3P20TF-NL>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
200VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
QFETP-CHANNEL FEATURES •AdvancedNewDesign •AvalancheRuggedTechnology •RuggedGateOxideTechnology •VeryLowIntrinsicCapacitances •ExcellentSwitchingCharacteristics •UnrivalledGateCharge:6.0nC(Typ.) •ExtendedSafeOperatingArea •LowerRDS(ON):2.06Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-ChannelQFETMOSFET-200V,-0.67A,2.7 Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VP-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
200VP-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-3A@TC=25℃ ·DrainSourceVoltage- :VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter, | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
2017+ |
SOT23 |
35689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
23+ |
N/A |
35900 |
正品授权货源可靠 |
询价 | |||
FAIRCHILD/仙童 |
1948+ |
SOT23 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
ON Semiconductor |
2022+ |
TO-261-4,TO-261AA |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ON |
22+ |
6000 |
代理原装正品 |
询价 | |||
ON |
2021 |
N/A |
6000 |
询价 | |||
ON/安森美 |
23+ |
SOT-223 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ON/安森美 |
22+ |
24000 |
询价拨打15919799957全天在线 |
询价 | |||
ON/安森美 |
2021+ |
SOT-223 |
1000 |
13632880263 |
询价 |
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