零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelLogicLevelPWMOptimizedPowerMOSFET GeneralDescription ThisdeviceemploysanewadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowonresistance. Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. F | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
N-ChannelEnhancement-ModeMOSFET(25V,45A) Features •RDS(on)=15mΩ@VGS=10V,ID=25A •RDS(on)=20mΩ@VGS=4.5V,ID=25A •Advancedtrenchprocesstechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent •ImprovedShoo | HSMC 华昕 | HSMC | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHB45N03LTissuppl | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticsuitableforsurfacemountingenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP45N03LTissuppl | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips |
详细参数
- 型号:
FQP45N03
- 功能描述:
MOSFET N-Ch/LL/30V/45a 0.018Ohm@VGS=10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD品牌 |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
FAIRCHILD |
1305+ |
TO-220 |
12000 |
公司特价原装现货 |
询价 | ||
仙童 |
1746+ |
TO220 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
FAIRCHILD |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-220F |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
FAIRCHILD |
21+ |
TO-220 |
556 |
原装现货假一赔十 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
FAIRCHILD |
21+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
询价 | ||
FAIRCHILD |
21+ |
TO-220 |
56000 |
公司进口原装现货 批量特价支持 |
询价 |
相关规格书
更多- FQP45N03L
- FQP46N15
- FQP47P06_NW82049
- FQP47P06NW82049
- FQP4N20L
- FQP4N25
- FQP4N50_Q
- FQP4N80
- FQP4N90
- FQP4P25
- FQP50N06
- FQP55N06
- FQP58N08
- FQP5N20L
- FQP5N40
- FQP5N50C
- FQP5N50C_Q
- FQP5N60C
- FQP5N80
- FQP5N90
- FQP5P20
- FQP630
- FQP65N06
- FQP6N15
- FQP6N40
- FQP6N40C_NBEC003
- FQP6N40CF
- FQP6N40CF_12
- FQP6N40L
- FQP6N50
- FQP6N60
- FQP6N60C_F080
- FQP6N80
- FQP6N80C
- FQP6N90C
- FQP6P25
- FQP70N10
- FQP7N10L
- FQP7N20L
- FQP7N40
- FQP7N65C
- FQP7N80C
- FQP7P20
- FQP85N06TU
- FQP8N60C
相关库存
更多- FQP45N15V2
- FQP47P06
- FQP47P06_SW82049
- FQP4N20
- FQP4N20TSTU
- FQP4N50
- FQP4N60
- FQP4N80_Q
- FQP4N90C
- FQP4P40
- FQP50N06L
- FQP55N10
- FQP5N20
- FQP5N30
- FQP5N50
- FQP5N50C_F080
- FQP5N60
- FQP5N60C_Q
- FQP5N80_Q
- FQP5P10
- FQP60N03L
- FQP630TSTU
- FQP65N06_Q
- FQP6N25
- FQP6N40C
- FQP6N40C_Q
- FQP6N40CF_06
- FQP6N40CNBEC003
- FQP6N45
- FQP6N50C
- FQP6N60C
- FQP6N70
- FQP6N80_JEDEC
- FQP6N90
- FQP6N90C_Q
- FQP70N08
- FQP7N10
- FQP7N20
- FQP7N30
- FQP7N60
- FQP7N80
- FQP7P06
- FQP85N06
- FQP8N25
- FQP8N60C_Q