首页 >FQP30NF06>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
60VN-ChannelEnhancementModePowerMOSFET GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
N-CHANNEL60V-0.020ohm-28AIPAK/DPAKSTripFET??IIPOWERMOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
60VN-ChannelEnhancementModePowerMOSFET GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnolo | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
60VN-ChannelEnhancementModePowerMOSFET GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnolo | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
60VN-ChannelEnhancementModePowerMOSFET GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
N-CHANNEL60V-0.022ohm-35ADPAK/IPAKSTripFET??POWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Automotive-gradeN-channel60V,0.022Ωtyp.,35ASTripFET™IIPowerMOSFETinaDPAKpackage Features AEC-Q101qualified Lowthresholddrive Gatechargeminimized Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFET™process isspecificallydesignedtominimizeinput capacitanceandgatecharge.Itisthereforeideal asaprimaryswitchin | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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