P-Channel QFET짰 MOSFET -100 V, -6.6 A, 530 m廓

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.25031 Mbytes 页数：9 Pages

Fairchild

仙童半导体

100V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：662.37 Kbytes 页数：9 Pages

Fairchild

仙童半导体

功率 MOSFET，P 沟道，QFET®，-100 V，-6.6 A，530 mΩ，DPAK

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-6.6A, -100V, RDS(on)= 530mΩ（最大值）@VGS = -10 V, ID = -3.3A栅极电荷低（典型值：12nC)\n•低 Crss（典型值30pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

P-Channel QFET MOSFET - 100 V, - 6.6 A, 530 m

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：551.59 Kbytes 页数：9 Pages

Fairchild

仙童半导体

100V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：645.51 Kbytes 页数：7 Pages

Fairchild

仙童半导体

P-channel Enhancement Mode Power MOSFET

Features  VDS= -100V, ID= -13A RDS(ON)

文件：699.9 Kbytes 页数：4 Pages

Bychip

百域芯

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

文件：792.06 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：AP15P10DXXXYYYY；Package：TO-252；-100V P-Channel Enhancement Mode MOSFET

文件：1.34872 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

-100V，-6.6A，530mΩ，DPAK，P 沟道 QFET®

这些 P 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。这一先进技术是专为最大限度地降低导通电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。这些器件非常适合音频放大器、高效开关DC/DC转换器以及DC电机控制等低压应用。 •6.6 A、-100 V、RDS(on) = 0.53O (VGS = -10 V)\n•低栅极电荷（典型值12 nC）\n•低Crss（典型值30pF）\n•快速开关\n•100% 经过雪崩击穿测试\n•提高了 dv/dt 性能\n•符合 AEC Q101 标准\n•符合 RoHS 标准;

ONSEMI

安森美半导体