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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FQI3N80	文件：661.96 Kbytes Page：9 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP3N80	文件：652.76 Kbytes Page：8 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP3N80C	文件：810.37 Kbytes Page：10 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP3N80C	文件：296.36 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQPF3N80	文件：639.78 Kbytes Page：8 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF3N80C	文件：810.37 Kbytes Page：10 Pages	800VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF3N80C	文件：278.5 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FTK3N80D	文件：223.46 Kbytes Page：6 Pages	3Amps,800VoltsN-CHANNELMOSFET	FS First Silicon Co., Ltd	FS
FTK3N80F	文件：223.46 Kbytes Page：6 Pages	3Amps,800VoltsN-CHANNELMOSFET	FS First Silicon Co., Ltd	FS
FTK3N80I	文件：223.46 Kbytes Page：6 Pages	3Amps,800VoltsN-CHANNELMOSFET	FS First Silicon Co., Ltd	FS
FTK3N80P	文件：223.46 Kbytes Page：6 Pages	3Amps,800VoltsN-CHANNELMOSFET	FS First Silicon Co., Ltd	FS
HFD3N80	文件：1.20655 Mbytes Page：9 Pages	800VN-ChannelMOSFET	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
HFP3N80	文件：870.6 Kbytes Page：8 Pages	800VN-ChannelMOSFET	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
HFS3N80	文件：1.2775 Mbytes Page：8 Pages	800VN-ChannelMOSFET	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
HFU3N80	文件：1.20655 Mbytes Page：9 Pages	800VN-ChannelMOSFET	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
HM3N80	文件：956.28 Kbytes Page：10 Pages	SiliconN-ChannelPowerMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
ISC3N80F	文件：323.52 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.0A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.0Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFA3N80	文件：100.19 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs Features ●Internationalstandardpackage ●LowRDS(on) ●RatedforunclampedInductiveload Switching(UIS) Advantages ●Easytomount ●Spacesavings ●Highpowerdensity	IXYS IXYS Corporation	IXYS
IXFA3N80	文件：333.37 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP3N80	文件：100.19 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs Features ●Internationalstandardpackage ●LowRDS(on) ●RatedforunclampedInductiveload Switching(UIS) Advantages ●Easytomount ●Spacesavings ●Highpowerdensity	IXYS IXYS Corporation	IXYS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	FQB3N80TMIC	FAIRCHILD/仙童	23+	TO-263	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	FQB3N80TMIC	FAIRCHILD/仙童	2022	TO-263	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市科芯源微电子有限公司	FQB3N80低压MOS管	FAIRCHILD/仙童	24+	TO263	58000	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市力通伟业半导体有限公司	FQB3N90	FCS	13+	TO-263	100	特价热销现货库存	询价
深圳市勤思达科技有限公司	FQB3N90	FAICHILD	12+	TO-263	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市星佑电子有限公司	FQB3N90	仙童	05+	TO-263	3800	原装进口	询价
深圳市一线半导体有限公司	FQB3N90	FAIRCHILD	08+(pbfree)	TO-263(D2PAK)	8866		询价
深圳市永贝尔科技有限公司	FQB3N90	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市华斯顿科技有限公司	FQB3N90	FCS	22+23+	TO-263	44657	绝对原装正品全新进口深圳现货	询价
深圳市宇集芯电子有限公司	FQB3N90	FAIRCHIL	24+	TO-263	90000	一级代理商进口原装现货、价格合理	询价

更多FQB3N80TMIC供应商更新时间2024-9-23 11:01:00

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