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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
CED11P10	文件：547.91 Kbytes Page：5 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-7A,RDS(ON)=270mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS
CEU11P10	文件：547.91 Kbytes Page：5 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-7A,RDS(ON)=270mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS

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CED11P10

文件：547.91 Kbytes

Page：5 Pages

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-7A,RDS(ON)=270mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS

CEU11P10