首页 >FQAF13N80C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
800VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQClass N-ChannelEnhancementMode AvalancheRatedHighdv/dt,LowQg Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastswitching •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easy | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQClass N-ChannelEnhancementMode AvalancheRatedHighdv/dt,LowQg Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastswitching •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easy | IXYS IXYS Corporation | IXYS | ||
CoolMOSPowerMOSFETISOPLUS220 | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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