首页 >FQA69N30>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=69A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=49mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHTPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHTPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode | IXYS IXYS Corporation | IXYS | ||
PolarHTPowerMOSFET | IXYS IXYS Corporation | IXYS |
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