首页 >FQA50N50>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HiPerFETTMPowerMOSFET HiPerFETPowerMOSFET SingleDieMOSFET Features •Lowcostdirect-copperbondedaluminiumpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •2500Visolation •Lowdraintocasecapacitance •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure • | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFET HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFET HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=125mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFET-TMPowerMOSFETsISOPLUS247-TM HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackSurface) SingleDieMOSFET Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
POWERFIELDEFFECTTRANSISTORN-CHANNELENHANCEMENTMODESILICONGATETMOS | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola |
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