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GC11N60F	文件：4.32953 Mbytes Page：7 Pages	PowerFactorCorrection Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
GC11N60F	文件：4.32953 Mbytes Page：7 Pages	PowerFactorCorrection(PFC) Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
GC11N60F	文件：4.32953 Mbytes Page：7 Pages	PowerFactorCorrection(PFC) Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
GC11N60K	文件：4.32953 Mbytes Page：7 Pages	PowerFactorCorrection(PFC) Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
GC11N60K	文件：4.32953 Mbytes Page：7 Pages	PowerFactorCorrection(PFC) Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
GC11N60K	文件：4.32953 Mbytes Page：7 Pages	PowerFactorCorrection Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
GC11N60T	文件：4.32953 Mbytes Page：7 Pages	PowerFactorCorrection Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
GC11N60T	文件：4.32953 Mbytes Page：7 Pages	PowerFactorCorrection(PFC) Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
HFF11N60S	文件：716.92 Kbytes Page：7 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy	HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 华汕电子器件汕头华汕电子器件有限公司	Huashan
HMS11N60I	文件：688.54 Kbytes Page：7 Pages	600VN-ChannelMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI

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