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GLAR4710

SURFCOILSMTINDUCTORS

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GLAR4710M

SURFCOILSMTINDUCTORS

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GLUR4710

SURFCOILSMTINDUCTORS

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GLUR4710M

SURFCOILSMTINDUCTORS

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GLXR4710

SURFCOILSMTINDUCTORS

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IIRFB4710

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIRFP4710

N-ChannelMOSFETTransistor

•DESCRITION •HighFrequencyDC-DCConverters •UninterruptiblePowerSupply •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤14mΩ •Enhancementmode: Vth=3.5to5.5V(VDS=VGS,ID=250μA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performa

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB4710

PowerMOSFET(Vdss=100v,Rds(on)max=0.014ohm,Id=75A)

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●MotorControl ●Uninterru

IRF

International Rectifier

IRFB4710

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB4710PBF

HEXFET짰PowerMOSFET

IRF

International Rectifier

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