MOSFET

低导通电阻\n高可靠性\n驱动要求简单\n \n产品封装\n封装形式:SOT-23;

FNK-TECH

乾野微纳

P-Cha nnel Enhancement MOSFET

Features  VDS=-20V, ID=-1.6A  RDS(ON)=380mΩ@VGS=-4.5V(Typ.)  RDS(ON)=520mΩ@VGS=-2.5V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Main Applications  Battery Protection  Load Switch  Power Management

文件：191.94 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

文件：170.48 Kbytes 页数：3 Pages

GHZTECH

SOT-23 Plastic-Encapsulate MOSFETS

文件：5.03147 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

-2.8A竊?20V P-CHANNEL MOSFET

文件：111.41 Kbytes 页数：4 Pages

KIA

可易亚半导体