MOSFET

低导通电阻\n高可靠性\n驱动要求简单\n \n产品封装\n封装形式:TO-263;

FNK-TECH

乾野微纳

RF POWER GAN TRANSISTOR

General Description Polyfets GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down

文件：47.46 Kbytes 页数：2 Pages

Polyfet

Noise Filters

文件：3.47095 Mbytes 页数：51 Pages

NEC

瑞萨

GT Metal Box Single-Phase Filters

文件：401.81 Kbytes 页数：12 Pages

KEMETKEMET Corporation

基美