丝印：TR；Package：UMT6；High transition frequency (dual transistors)

Features 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.95pF)

文件：66.19 Kbytes 页数：2 Pages

ROHM

罗姆

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 96A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= 10V APPLICATIONS · For Switching · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

文件：338.23 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 64.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 59mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：322.68 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：375.55 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：291.95 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel enhancement mode power MOSFET

FUJI

富士通

N-Channel enhancement mode power MOSFET

FUJI

富士通

功率MOSFET 600V-700V

FUJI

富士通