首页 >FMMT634QTA>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IRC634

PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A)

HEXFETPowerMOSFET

IRF

International Rectifier

IRC634PRF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF634

PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A)

Description ThirdInternationalRectifierfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofParalleli

IRF

International Rectifier

IRF634

N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET

Description UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF634

AdvancedPowerMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=250V ♦LowerRDS(ON):0.327Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF634

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半导体

IRF634

N-channelmosfettransistor

Features •WithTO-220package •Simpledriverequirements •Fastswitching •VDSS=250V;RDS(ON)≤0.45Ω;ID=8.1A •1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF634

N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF634

N-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent-ID=8.1A@TC=25°C •DrainSourceVoltage- :VDSS=250V(Min) •StaticDrain-SourceOn-Resistance :RDS(OD=0.45Ω(Max) •FastSwitchingSpeed •LowDriveRequirement APPLICATIONS •Highcurrent,highspeedswitching •Switchmodepowersupplies •DC-DCconv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF634

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

产品属性

  • 产品编号:

    FMMT634QTA

  • 制造商:

    Diodes Incorporated

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 晶体管类型:

    NPN - 达林顿

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    960mV @ 5mA,1A

  • 电流 - 集电极截止(最大值):

    100nA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    20000 @ 100mA,5V

  • 频率 - 跃迁:

    140MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23-3

  • 描述:

    TRANS NPN DARL 100V 0.9A SOT23-3

供应商型号品牌批号封装库存备注价格
DIODES(美台)
24+
SOT-23
3022
原厂订货渠道,支持BOM配单一站式服务
询价
Diodes Incorporated
24+
TO-236-3,SC-59,SOT-23-3
30000
晶体管-分立半导体产品-原装正品
询价
ZETEX/DIODES
24+
SOT-23
500597
免费送样原盒原包现货一手渠道联系
询价
DIODES/缇庡彴
23+
NA
15000
鍘熻姝e搧宸ュ巶鐜拌揣
询价
DIODES(美台)
2447
SOT-23(SOT-23-3)
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
DIODES
1809+
SOT-23
3675
就找我吧!--邀您体验愉快问购元件!
询价
DIODES/美台
24+
SOT-23
9600
原装现货,优势供应,支持实单!
询价
DIODES/美台
21+
SOT-23(SOT-23-3)
10000
原装,品质保证,请来电咨询
询价
DIODES/美台
23+
NA
6000
原装正品假一罚百!可开增票!
询价
DIODES/美台
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
更多FMMT634QTA供应商 更新时间2025-6-11 9:49:00