首页 >FMMT449IC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SOT23NPNSILICONPLANARMEDIUMPOWERTRANSISTOR FEATURES *Lowequivalenton-resistance;RCE(sat)250mΩat1A COMPLEMENTARYTYPE-FMMT549 PARTMARKINGDETAIL-449 | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
NPNSILICONPLANAR | Zetex Zetex Semiconductors | Zetex | ||
NPNSILICONPLANARMEDIUMPOWERTRANSISTOR | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
GaAsMMICx2ACTIVEFREQUENCYMULTIPLIER,27-33GHzOUTPUT | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsMMICx2ACTIVEFREQUENCYMULTIPLIER,27-33GHzOUTPUT | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsMMICx2ACTIVEFREQUENCYMULTIPLIER,27-33GHzOUTPUT | Hittite Hittite Microwave Corporation | Hittite | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·DCCurrentGainhFE： 10-40@IC=1A VCEO：1200V ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforpoweramplifierandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SJ449isP-ChannelMOSFieldEffectTransistordesignedforhighvoltageswitchingapplications. FEATURES •LowOn-Resistance RDS(on)=0.8ΩMAX.(@VGS=–10V,ID=–3.0A) •LowCissCiss=1040pFTYP. •HighAvalancheCapabilityRatings •IsolatedTO-2 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SquareType | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
SquareType | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic |
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