Primary-Side-Regulation PWM with POWER MOSFET

文件：454.1 Kbytes 页数：15 Pages

ONSEMI

安森美半导体

Package：8-SOIC（0.154"，3.90mm 宽），7 引线；包装：管件 类别：集成电路（IC） AC DC 转换器，离线开关 描述：IC OFFLINE SWITCH FLYBACK 7SOIC

ONSEMI

安森美半导体

2K x 8 CMOS PROM

Description The HM-6617 is a 16,384 bit fuse link CMOS PROM in a 2K word by 8-bit/word format with “Three-State” outputs. This PROM is available in the standard 0.600 inch wide 24 pin SBDIP, the 0.300 inch wide slimline SBDIP, and the JEDEC standard 32 pad CLCC. Features • Low Power Standby and

文件：91.67 Kbytes 页数：7 Pages

Intersil

2K x 8 CMOS PROM

• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby and Operating Power - ICCSB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A - ICCOP. . . . . . . . . . . . . . . . . . . . . . . .

文件：304.63 Kbytes 页数：7 Pages

RENESAS

瑞萨

Radiation Hardened 2K x 8 CMOS PROM

Radiation Hardened 2K x 8 CMOS PROM The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM, organized in a 2K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617. Synchronous circuit design tech

文件：128.419 Kbytes 页数：14 Pages

Intersil