FLM1414-4F

Internally Matched Power GaAs FET

EIA1414-4P

14.0-14.5GHz,4WInternallyMatchedPowerFET

14.0-14.5GHz,4WInternallyMatchedPowerFET •14.0-14.5GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM •EIAFEATURESHIGHPAE(27TYPICAL) •EIBFEATURESHIGHIP3(49dBmTYPICAL) •+36.5/+35.5dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB •8.5/7.5dBTYPICALG1dBPOWERGAINFOREIA/EI

EIB1414-4P

14.0-14.5GHz,4WInternallyMatchedPowerFET

14.0-14.5GHz,4WInternallyMatchedPowerFET •14.0-14.5GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM •EIAFEATURESHIGHPAE(27TYPICAL) •EIBFEATURESHIGHIP3(49dBmTYPICAL) •+36.5/+35.5dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB •8.5/7.5dBTYPICALG1dBPOWERGAINFOREIA/EI

EIC1414-4

14.00-14.50GHz4-WattInternally-MatchedPowerFET

EIC1414-4NH

14.00-14.50GHz4-WattInternally-MatchedPowerFET

NEZ1414-4E

N-CHANNELGaAsMESFET

4WX,Ku-BANDPOWERGaAsMESFET DESCRIPTION TheNEZ1011-4EandNEZ1414-4EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhigh outputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwith onlya50Wexternalcircuit.To

NEZ1414-4E

4WX,Ku-BANDPOWERGaAsMESFET

DESCRIPTION TheNEZ1011-4EandNEZ1414-4EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50Ωexternalcircuit.Toreducethermalresistancethedevic

TIM1414-4LA

MICROWAVEPOWERGaAsFET

FEATURES ■HIGHPOWERTP1dB=36.5dBmat14.0GHzto14.5GHz ■HIGHGAING1dB=6.5dBat14.0GHzto14.5GHz ■BROADBANDINTERNALLYMATCHED ■HERMETICALLYSEALEDPACKAGE