首页 >FLL5964-8D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
C-BandInternallyMatchedFET | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
C-BANDPOWERGAASMESFET DESCRIPTION TheNEZC-BandseriesofhighperformancemicrowavepowerGaAsMESFETsprovideshighgainandlowintermodulationdistortionoverstandardanddigitalcommunicationbandsfrom3to8GHz. FEATURES ●INTERNALLYMATCHED(IN/OUT) ●HIGHPout(4W,8W,&15W) ●CLASSAOPERATION | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
C-BANDPOWERGAASMESFET DESCRIPTION TheNEZC-BandseriesofhighperformancemicrowavepowerGaAsMESFETsprovideshighgainandlowintermodulationdistortionoverstandardanddigitalcommunicationbandsfrom3to8GHz. FEATURES ●INTERNALLYMATCHED(IN/OUT) ●HIGHPout(4W,8W,&15W) ●CLASSAOPERATION | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
4W/8WC-BANDPOWERGaAsFETN-CHANNELGaAsMESFET DESCRIPTION TheNEZSeriesofmicrowavepowerGaAsFETsofferhighoutputpower,highgainandhighefficiencyatC-bandformicrowaveandsatellitecommunications.Internalinputandoutputcircuitsmatchedto50Ωare designedtoprovidegoodflatnessofgainandoutputpowerinallocated | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
4W/8WC-BANDPOWERGaAsFETN-CHANNELGaAsMESFET DESCRIPTION TheNEZSeriesofmicrowavepowerGaAsFETsofferhighoutputpower,highgainandhighefficiencyatC-bandformicrowaveandsatellitecommunications.Internalinputandoutputcircuitsmatchedto50Ωare designedtoprovidegoodflatnessofgainandoutputpowerinallocated | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MICROWAVEPOWERGAASFET | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MICROWAVEPOWERGaAsFET | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
HIGHPOWERP1dB=39.5dBmat5.9GHzto6.4GHz | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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