场效应管 / 高压MOSFERs

First

福斯特

功率MOS/高压功率MOS

First

福斯特

500V N-Channel MOSFET

500V N-Channel MOSFET

文件：702.78 Kbytes 页数：8 Pages

Fairchild

仙童半导体

500V N-Channel MOSFET

Features • 7.2A,500V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 20 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：691.7 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=7.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.73mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.69 Kbytes 页数：2 Pages

ISC

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