FIR6N60PG技术资料参数供应代理福斯特First-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FIR6N60PG	文件：300 bytes Page：1 Pages	场效应管 / 高压MOSFERs	First 福斯特	First
FQB6N60	文件：547.21 Kbytes Page：9 Pages	600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：547.21 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild
FQB6N60	文件：885.29 Kbytes Page：9 Pages	600V N-Channel MOSFET Features • 5.5A, 500V, RDS(on) = 1.3Ω @VGS = 10 V • Low gate charge ( typical 17 nC) • Low Crss ( typical 11 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability 文件：885.29 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild
FQB6N60C	文件：680.4 Kbytes Page：9 Pages	600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：680.4 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild

更多FIR6N60PG供应商更新时间2025-11-3 14:05:00