场效应管 / 高压MOSFERs

First

福斯特

400V N-Channel MOSFET

Features • 4.5A, 400V, RDS(on) = 1.6Ω @VGS = 10 V • Low gate charge ( typical 10 nC) • Low Crss ( typical 7.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：714.91 Kbytes 页数：9 Pages

Fairchild

仙童半导体

400V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：735.8 Kbytes 页数：9 Pages

Fairchild

仙童半导体

N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ohm

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：735.34 Kbytes 页数：9 Pages

Fairchild

仙童半导体