Advanced N-Ch Power MOSFET-T

文件：2.01838 Mbytes 页数：8 Pages

FOSTER

福斯特半导体

功率MOS/高压功率MOS

First

福斯特

700V N-Channel MOSFET -T

文件：2.75036 Mbytes 页数：9 Pages

FOSTER

福斯特半导体

700V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：622.06 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.0A@ TC=25℃ ·Drain Source Voltage -VDSS=700V(Min) ·Static Drain-Source On-Resistance -RDS(on) =6.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.2 Kbytes 页数：2 Pages

ISC

无锡固电