FGY4L160T120SWD中文资料安森美半导体数据手册PDF规格书

描述 Description

Using the novel field stop 7th generation IGBT technology and the

Gen7 Diode in TO247 4−lead package, FGY4L160T120SWD offers

the optimum performance with low switching and conduction losses

for high−efficiency operations in various applications like Solar

Inverter, UPS and ESS.

特性 Features

• Maximum Junction Temperature TJ = 175°C

• Positive Temperature Coefficient for Easy Parallel Operation

• High Current Capability

• Smooth and Optimized Switching

• Low Switching Loss

• RoHS Compliant

Applications

• Solar Inverter

• UPS

• Energy Storage System