FGH40T65SPD

IGBT - Field Stop, Trench 650 V, 40 A

FGH40T65SPD-F155

Marking：FGH40T65SPD；Package：TO-247-3LD；IGBT - Field Stop, Trench 650 V, 40 A

FGH40T65SPD-F085

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT NPT 650V 80A TO247-3

FGH40T65SPD-F155

Package：TO-247-3；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 80A 267W TO-247

FGH40T65SQD

IGBT-FieldStop,Trench650V,40A

Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’snew seriesoffieldstop4thgenerationIGBTsoffertheoptimum performanceforsolarinverter,UPS,welder,telecom,ESSandPFC applicationswherelowconductionandswitchinglossesareessential. Features •MaxJuncti

FGH40T65SQD

650V,40AFieldStopTrenchIGBT

FGH40T65UPD

650V,40AFieldStopTrenchIGBT

FGH40T65UPD

Field-StopTrenchIGBT

DESCRIPTION ·HighInputImpedance ·HighCurrentCapabilityt ·LowSaturationVoltage:VCE(sat)=1.65V(Typ.)@IC=40A APPLICATIONS ·SolarInverter,UPS,Welder,DigitalPowerGenerator ·Telecom,ESS

FGH40T65UQDF

FieldStopTrenchIGBT

FGHL40T65LQDT

FieldStopTrenchIGBT40A,650V

Fieldstop4thgenerationLowVCE(Sat)IGBTtechnologyandFull currentratedcopakDiodetechnology. Features •MaximumJunctionTemperature:TJ=175°C •PositiveTemperatureCo−efficientforEasyParallelOperating •HighCurrentCapability •LowSaturationVoltage:VCE(Sat)=1.15V(Typ