丝印：FGB40T65SPD；Package：D2PAK-3；IGBT - Field Stop, Trench 650 V, 40 A

General Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high

文件：2.02757 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

Field-Stop Trench IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC=40A · High Current Capability · High Input Impedance · Fast Switching APPLICATIONS · Motor Driver · Automotive Chargers · Onboard Charge · AirCon Compressor

文件：370.79 Kbytes 页数：3 Pages

ISC

无锡固电

Field Stop Trench IGBT

文件：946.61 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

IGBT - Field Stop, Trench 650 V, 40 A

文件：480.04 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

IGBT - Field Stop, Trench 650 V, 40 A

文件：1.27362 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT - Field Stop, Trench 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction hea

文件：503.73 Kbytes 页数：9 Pages

ONSEMI

安森美半导体