IGBT模块

Our well-known 34 mm 1200V dual IGBT modules with fast TRENCHSTOP IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. • Extended Operation Temperature T vj op\n• Low Switching Losses\n• Low V CEsat\n• T vj op = 150°C\n• V CEsat with positive Temperature Coefficient\n• Isolated Base Plate\n• Standard Housing\n\n优势:\n• Flexibility\n• Optimal electrical performance\n• Highest reliability;

Infineon

英飞凌

IGBT模块

EasyDUAL™ 2 1200V dual IGBT module with IGBT3 ·High power density\n ·Established Easy module concept\n ·Integrated temperature sensor available\n ·Low stray inductance module design\n ·RoHS-compliant modules;

Infineon

英飞凌

Package：模块；包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：MEDIUM POWER ECONO

Infineon

英飞凌

Package：模块；包装：散装 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MOD 1200V 75A 395W

Infineon

英飞凌

Package：模块；包装：散装 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MOD 1200V 100A 345W

Infineon

英飞凌