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FDV303N

DigitalFET,N-Channel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDV303N

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

FDV303N

N-Channel25V(D-S)MOSFET

Features Verylowlevelgatedriverequirementsallowingdirect operationin3Vcircuits.VGS(th)6kV HumanBodyModel CompactindustrystandardSOT-23surfacemountpackage. VDS(V)=25V ID=2A RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

FDV303N

N-Channel25V(D-S)MOSFET

GeneralDescription Thisveryhighdensityprocessistailoredtominimizeon-state resistanceatlowgatedriveconditions.Thisdeviceisdesigned especiallyforapplicationinbatterycircuitsusingeitherone lithiumorthreecadmiumorNMHcells.Itcanbeusedasaninverter orforhigh

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

FDV303N-NL

N-Channel20V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

FFM303

Fastrecoverytype

3.0ASurfaceMountFastRecoveryRectifiers-50-1000V Features •Batchprocessdesign,excellentpowerdissipationoffersbetterreverseleakagecurrentandthermalresistance. •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Highcurrentcapability. •Fastswitchi

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FFM303

SURFACEMOUNTGLASSPASSIVATEDFASTRECOVERYSILICONRECTIFIER(VOLTAGERANGE50to1000VoltsCURRENT3.0Amperes)

RECTRON

Rectron Semiconductor

FFM303

SurfaceMountFastRecoveryRectifiers

Features: *PlasticpackagehasUnderwritersLaboratory *FlammabilityClassication94V-OUtilizingFlame *RetardantEpoxyMoldingCompound. *Forsurfacemountedapplications. *ExceedsenvironmentalstandardsofMIL-S-19500/228 *Lowleakagecurrent.

WEITRON

Weitron Technology

FFM303

3A200VFastrecoverydiode

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳冠荣电子有限公司

FFM303

SURFACEMOUNTFASTRECOVERYRECTIFIERDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳冠荣电子有限公司

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