N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

文件：247.74 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel QFET짰 MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：742.85 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench MOSFET 150V, 29A, 54mΩ

ONSEMI

安森美半导体

N-Channel QFET® MOSFET

ONSEMI

安森美半导体