30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

-30V P沟道PowerTrench® MOSFET

该P沟道MOSFET特别为提高DC/DC转换器的整体效率而设计，采用同步或传统开关脉宽调制(PWM)控制器及电池充电器。 比其他具有可比RDS(ON)规格的MOSFET相比，这些MOSFET拥有更快的开关速度和更低的栅极电荷。 •3.4 A, -30 V\n•RDS(ON) = 130 mΩ @ VGS = 10 V\n•RDS(ON) = 200 mΩ @ VGS = 4.5 V\n•快速开关速度\n•低栅极电荷（2.5nC典型值）\n•高性能沟道技术可实现极低的RDS(ON)\n•采用广泛使用的表面贴装封装，具有高功率和高电流处理能力;

ONSEMI

安森美半导体

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO

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Zetex

High Voltage Transistor

Features ● 400 Volt VCEO

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KEXIN

科信电子

SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features • BVCEO > 400V • IC = 225mA High Continuous Collector Current • ICM = 1A Peak Pulse Current • 500mW Power Dissipation • Excellent hFE Characteristics Up To 100mA • Complementary PNP Type: FMMT558 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimo

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DIODES

美台半导体