FDT3612

Marking：NZrE；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

Application Load/PowerSwitching InterfacingSwitching LogicLevelShift

FDT3612

100V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(O

FDT434

P-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •–5.5A,

FDT434P

P-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •–5.5A,

FDT439N

N-Channel 2.5V Specified EnhancementMode Field Effect Transistor

N-Channel2.5VSpecifiedEnhancementModeFieldEffectTransistor

FDT458P

30V P-Channel PowerTrench MOSFET

GeneralDescription ThisP-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers,andbatterychargers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETs

FDT459N

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance.Thesep

FDT461N

N-Channel Logic Level PowerTrench MOSFET

Features •rDS(ON)=1.45Ω(Typ.),VGS=4.5V,ID=0.4A •Qg(tot)=2.36nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode Applications •ServoMotorLoadControl •DC-DCconverters

FDT4N50NZU

Marking：FDT4N50NZU；Package：SOT-223；MOSFET - Power, N-Channel, UniFET II, Ultra FRFET 500 V, 2 A, 3

Description UniFETIIMOSFETisONSemiconductor’shighvoltage MOSFETfamilybasedonadvancedplanarstripeandDMOS technology.ThisadvancedMOSFETfamilyhasthesmalleston−state resistanceamongtheplanarMOSFET,andalsoprovidessuperior switchingperformanceandhigheravalancheen

FDT86244

SINGLE-CHIP DUAL PROSLIC®

Si32260/1Features TwocompleteFXSchannelsinasingle 6x8mmor8x8mmpackage PerformsallBORSCHTfunctions Idealforshort-orlong-loopapplications Ultralowpowerconsumption Internalbalancedorunbalancedringing Patentedlowpowerringing Adaptiveringing S