零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FDS8958B | Dual N & P-Channel PowerTrench짰 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m廓 Q2-P-Channel: -30 V, -4.5 A, 51 m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
VOICECOILMOTORDRIVER Providingcontrolanddriveofthevoicecoilmotorusedforheadpositioningindiskdriveapplications,theA8958CLBisafull-bridgedriverwhichcanbeconfiguredsothatitsoutputcurrentisadirectfunctionofanexternallyappliedcontrolvoltageorcurrent.Thislinearcurrentcontrolfu | Allegro Allegro MicroSystems | Allegro | ||
8940THRU89258955THRU8961 | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
VOICECOILMOTORDRIVER Providingcontrolanddriveofthevoicecoilmotorusedforheadpositioningindiskdriveapplications,theA8958CLBisafull-bridgedriverwhichcanbeconfiguredsothatitsoutputcurrentisadirectfunctionofanexternallyappliedcontrolvoltageorcurrent.Thislinearcurrentcontrolfu | Allegro Allegro MicroSystems | Allegro | ||
P&N-Channel30-V(D-S)MOSFET | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
P&N-Channel30-V(D-S)MOSFET | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
P&N-Channel30-V(D-S)MOSFET | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
P&N-Channel30-V(D-S)MOSFET | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
P&N-Channel30-V(D-S)MOSFET | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
NPPAIRENHANCEMENTMODE DESCRIPTION TheAM8958istheN&P-Channelenhancement modepowerfieldeffecttransistorusinghighcell densityDMOStrenchtechnology.Thishighdensity processisespeciallytailoredtominimizeon-state resistanceandprovidesuperiorswitching performance.Thisdeviceisparticularly | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
P&N-Channel32-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES 30V,21A,RDS(ON)=26mW@VGS=10V. RDS(ON)=45mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. -30V,-16A,RDS(ON)=46mW@VGS=-10V. RDS(ON)=77mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES ●30V,5.3A,RDS(ON)=35mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. -30V,-4.0A,RDS(ON)=65mΩ@VGS=-10V. RDS(ON)=100mΩ@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandin | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChanelandN-ChannelMOSFETuseadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) 30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-5.4A,RDS(ON)=45mW@VGS=-10V. RDS(ON)=80mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor FEATURES ■30V,6.8A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=42mΩ@VGS=4.5V. ■-30V,-4.8A,RDS(ON)=58mΩ@VGS=-10V. RDS(ON)=85mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabili | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) 30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-4.5A,RDS(ON)=65mW@VGS=-10V. RDS(ON)=95mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor N-channel:VOLTAGE30VoltsCURRENT7Ampere P-channel:VOLTAGE30VoltsCURRENT5.2Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomoto | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
NP-ChannelMOSFET Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
DualN&P-ChannelPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号:
FDS8958B
- 功能描述:
MOSFET 30V 6.4A Dual N&P Ch PowerTrench
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi |
23+ |
8-SOIC(0.154,3.90mm 宽) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
FSC |
15+ |
原厂原装 |
90000 |
进口原装现货假一赔十 |
询价 | ||
FCS |
1818+ |
SOP-8 |
11846 |
询价 | |||
FSC |
2020+ |
SO-8 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
FAIRCHILD/仙童 |
2021+ |
SOP-8 |
12385 |
优势渠道 只做原装 诚信经营 欢迎咨询 |
询价 | ||
FSC |
21+ |
SOP8 |
2890 |
询价 | |||
FAIRCHILD/仙童 |
21+ |
6000 |
原装正品 |
询价 | |||
ON/安森美 |
21+ |
SOP |
9852 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
FAIRCHILD/仙童 |
23+ |
SOP-8 |
22000 |
只做进口原装假一罚百 |
询价 | ||
ONSEMI |
22+ |
SOP8 |
2500 |
原装正品,实单请联系 |
询价 |
相关规格书
更多- FDS8960C
- FDS8984
- FDS9400A
- FDS9431A_F085
- FDS9926A
- FDS9933A
- FDS9945
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- FDS9958_F085
- FDSD0412-H-1R0M=P3
- FDSD0412-H-R47M=P3
- FDSD0420-H-3R3M=P3
- FDSD0630-H-100M=P3
- FDSD0630-H-1R5N=P3
- FDSD0630-H-3R3M=P3
- FDSD0630-H-5R6M=P3
- FDT1600N10ALZ
- FDT3612_SB82273
- FDT434P
- FDT457N
- FDT459N
- FDT86106LZ
- FDT86244
- FDT86256
- FDU3N40TU
- FDU6N50TU
- FDV14-187Q
- FDV18-187Q
- FDV301N
- FDV302P
- FDV303N
- FDV305N
- FD-V50
- FDY1002PZ
- FDY101PZ
- FDY2000PZ
- FDY300NZ
- FDY302NZ
- FDY6342L
- FDZ1416NZ
- FDZ191P
- FDZ197PZ
- FD-Z20HBW
- FDZ299P
- FDZ372NZ
相关库存
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- FDS9926A-CUTTAPE
- FDS9934C
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- FDS9958
- FDSAS6062
- FDSD0412-H-2R2M=P3
- FDSD0420-H-1R0M=P3
- FDSD0420-H-R47M=P3
- FDSD0630-H-1R0M=P3
- FDSD0630-H-2R2M=P3
- FDSD0630-H-4R7M=P3
- FDSS2407
- FDT3612
- FDT3N40TF
- FDT439N
- FDT458P
- FDT86102LZ
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- FDT86246
- FDU0650-H-R56M=P3
- FDU6N25
- FDU7N60NZTU
- FDV14-250Q
- FD-V30
- FDV301N_NB9V005
- FDV302P_NB8V001
- FDV304P
- FD-V30W
- FDW262P
- FDY100PZ
- FDY102PZ
- FDY3000NZ
- FDY301NZ
- FDY4000CZ
- FDZ1323NZ
- FDZ1905PZ
- FDZ193P
- FDZ2040L
- FD-Z20W
- FDZ371PZ
- FDZ375P