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FDS4435A

P-ChannelLogicLevelPowerTrench?줞OSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •–9A,–30V.RDS(ON)=0.017Ω@VGS=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS4435A

P-ChannelLogicLevelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS4435A-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

FDS4435BZ

30VoltP-ChannelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS4435BZ

P-ChannelPowerTrench짰MOSFET-30V,-8.8A,20m廓

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDS4435BZ

-30VP-ChannelMOSFET

GeneralDescription ThisdeviceiswellsuitedforPowerManagementandload switchingapplicationscommoninNotebookComputersand PortableBatteryPacks. Features VDS(V)=-30V ID=-8.8A(VGS=-10V) RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

FDS4435BZ

P-ChannelPowerTrenchMOSFET-30V,-8.8A,20mΩ

Features MaxrDS(on)=20mΩatVGS=-10V,ID=-8.8A MaxrDS(on)=35mΩatVGS=-4.5V,ID=-6.7A ExtendedVGSSrange(-25V)forbatteryapplications HBMESDprotectionlevelof±3.8KVtypical(note3) HighperformancetrenchtechnologyforextremelylowrDS(on) Highpowerand

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FDS4435BZ-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

FDS4435-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

FQ4435Q

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435Qusesadvancedtrenchtechnologytoprovideexcellent RDS(on),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgate resistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebook CPUcorepowerconversion. APPLICATIONS BatteryS

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

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