FDS2734

N 沟道，UItraFET Trench® MOSFET，250V，3.0A，117mΩ

此单 N 沟道 MOSFET 采用飞兆半导体公司先进的 UItraFET Trench® 工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。; •最大 rDS(on) = 117 mΩ（VGS = 10 V、ID = 3.0 A）\n•最大 rDS(on) =126 mΩ（VGS = 6 V、ID = 2.8 A）\n•快速开关速度\n•高性能沟道技术可实现极低的 rDS(on)\n•高功率和高电流处理能力\n•符合 RoHS 标准\n;

FDS2734

N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mohm

FSD273

SILICONLOWVOLTAGEHYPERABRUPTVARACTORDIODES

DeviceDescription Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristics,lowvoltageoperationandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Thesepartscanbeusedwithcontrolvoltagesfrom0

FSD273TA

SILICONLOWVOLTAGEHYPERABRUPTVARACTORDIODES

DeviceDescription Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristics,lowvoltageoperationandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Thesepartscanbeusedwithcontrolvoltagesfrom0

FSS273

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice

General-PurposeSwitchingDeviceApplications Features •Motordriveapplications. •Inverterdriveapplications. •4Vdrive.