N-Channel Shielded Gate PowerTrench MOSFET

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ONSEMI

安森美半导体

N-Channel Shielded Gate PowerTrench MOSFET

文件：439.18 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

文件：327.72 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，222A，2.3mΩ

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A\n• Power Density & Shielded Gate\n• High Performance Trench Technology for Extremely Low RDS(on)\n• High power density with Shielded gate technology\n• Extremely Low Reverse Recovery Charge, Qrr\n• Low Vds spike internal snubber function.\n• Low Gate ;

ONSEMI

安森美半导体