首页 >FDP20N60C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
600V,20AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’snewseriesoffieldstop2ndgenerationIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •MaximumJunctionTemperatu | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,20AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE( | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,20AFieldStopIGBT GeneralDescription Usingnovelfield-stopIGBTtechnology,Fairchild’snewseriesoffield-stopIGBTsofferstheoptimumperformanceforautomotivechargers,inverters,andotherapplicationswherelowconductionandswitchinglossesareessential. Features •Highcurrentcapability •Lowsat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,20AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VC | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Highcurrentcapability,Highinputimpedance | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
IGBT-FieldStop600V,20A Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features •HighCurrentCapability •LowS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
600V,20AFieldStopIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,20AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE( | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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