零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=164A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100 V N-Channel MOSFET •Fastswitchingspeed •Lowgatecharge,QG=54nC(typical) •Highperformancechanneltechnologycanachieveverylow RDS(on). •Highpowerandhighcurrenthandlingcapacity •MeetRoHSstandards •VDS=100V •ID(atVGS=10V)=100A •RDS(ON)(atVGS=10V) | UMWUMW 友台友台半导体 | UMW | ||
N-Channel PowerTrench짰 MOSFET 100V, 164A, 4.5m | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
100VN-ChannelMOSFET •Fastswitchingspeed •Lowgatecharge,QG=54nC(typical) •Highperformancechanneltechnologycanachieveverylow RDS(on). •Highpowerandhighcurrenthandlingcapacity •MeetRoHSstandards •VDS=100V •ID(atVGS=10V)=100A •RDS(ON)(atVGS=10V) | UMWUMW 友台友台半导体 | UMW | ||
OptiMOSTM3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOSTM3Power-Transistor VDS100V RDS(on),max4.5mW ID64A Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Ideal | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelPowerTrench짰MOSFET100V,164A,4.5m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerTrench짰MOSFET100V,67A,4.5m | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancementModeMOSFET | HUAYIHUAYI MICROELECTRONICS CO.,LTD. 华羿微华羿微电子股份有限公司 | HUAYI | ||
N-ChannelEnhancementModeMOSFET | HUAYIHUAYI MICROELECTRONICS CO.,LTD. 华羿微华羿微电子股份有限公司 | HUAYI | ||
N-ChannelEnhancementModeMOSFET | HUAYIHUAYI MICROELECTRONICS CO.,LTD. 华羿微华羿微电子股份有限公司 | HUAYI | ||
N-chTrenchMOSFET GeneralDescription ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConverter,SynchronousRectificationandaloadswitchinbatterypoweredapplications FEATU | KECKEC CORPORATION KEC株式会社 | KEC |
详细参数
- 型号:
FDP045N10
- 功能描述:
MSOFET N-CH 100V TO-220-3
- RoHS:
是
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
PowerTrench®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
仙童 |
12+ |
TO-220 |
6000 |
原装正品现货 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO220 |
45 |
只做原装进口 免费送样!! |
询价 | ||
FAIRCHILD/仙童 |
21+ |
TO-220 |
6850 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
FAIRCHILD/仙童 |
15+ |
TO220 |
45 |
只做原装/假一赔百 |
询价 | ||
FSC |
22+23+ |
TO-220 |
27357 |
绝对原装正品全新进口深圳现货 |
询价 | ||
仙童Fairchild/FSC |
21+ |
TO220 |
12588 |
原装现货,量大可定 |
询价 | ||
23+ |
N/A |
36300 |
正品授权货源可靠 |
询价 | |||
FAIRCHI |
22+ |
TO220 |
41459 |
原装正品现货 |
询价 | ||
FSC/ON |
23+ |
原包装原封 □□ |
800 |
原装进口特价供应 QQ 1304306553 更多详细咨询 库存 |
询价 | ||
FAIRCHILD |
23+ |
TO-TO-2203L |
12300 |
全新原装真实库存含13点增值税票! |
询价 |
相关规格书
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相关库存
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- FDP52N20
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