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FDN302P-NL

P-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

FDV302

DigitalFET,P-Channel

GeneralDescription ThisP-ChannellogiclevelenhancementmodefieldeffecttransistorisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeciallyfor

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDV302P

DigitalFET,P-Channel

GeneralDescription ThisP-ChannellogiclevelenhancementmodefieldeffecttransistorisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeciallyfor

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDV302P

P-ChannelMosfet

ProductSummary «Voss=20V,Ip=-07A +Ros(on)520mO@-4.5VMax) 750mQ@-2.5V(Max) 950mQ@-1.8V(TYP)

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

FDY302NZ

FDY302NZSingleN-Channel2.5VSpecifiedPowerTrench짰MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FFM302

SURFACEMOUNTGLASSPASSIVATEDFASTRECOVERYSILICONRECTIFIER(VOLTAGERANGE50to1000VoltsCURRENT3.0Amperes)

RECTRON

Rectron Semiconductor

FFM302

Fastrecoverytype

3.0ASurfaceMountFastRecoveryRectifiers-50-1000V Features •Batchprocessdesign,excellentpowerdissipationoffersbetterreverseleakagecurrentandthermalresistance. •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Highcurrentcapability. •Fastswitchi

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FFM302

SurfaceMountFastRecoveryRectifiers

Features: *PlasticpackagehasUnderwritersLaboratory *FlammabilityClassication94V-OUtilizingFlame *RetardantEpoxyMoldingCompound. *Forsurfacemountedapplications. *ExceedsenvironmentalstandardsofMIL-S-19500/228 *Lowleakagecurrent.

WEITRON

Weitron Technology

FFM302

3A100VFastrecoverydiode

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳冠荣电子有限公司

FFM302

SURFACEMOUNTFASTRECOVERYRECTIFIERDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳冠荣电子有限公司

详细参数

  • 型号:

    FDN302P_Q

  • 功能描述:

    MOSFET SSOT-3 P-CH 2.5V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Fairchild
23+
SuperSOT?-3
7750
全新原装优势
询价
ONSEMI
23+
1829
原装正品现货,德为本,正为先,通天下!
询价
三年内
1983
只做原装正品
询价
ON/安森美
2223+
SSOT3
26800
只做原装正品假一赔十为客户做到零风险
询价
ON/安森美
24+
SSOT3
20000
只做正品原装现货
询价
FAIRCHILD/仙童
15+
SOT23-3
499
就找我吧!--邀您体验愉快问购元件!
询价
FAIRCHILD/仙童
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
23+
SOT23
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
询价
FAIRCHILD/仙童
2019+PB
SOT-23
45000
全新-特价大量供货房间
询价
FAIRCHILD/仙童
1630+
SOT-23
1000
进口原装现货假一赔万力挺实单
询价
更多FDN302P_Q供应商 更新时间2025-5-24 14:04:00