N 沟道，Power Trench® MOSFET，60V，129A，3.4mΩ

此N沟道MOSFET使用同步或传统的开关PWM控制器，专为提高DC/DC转换器的整体效率并最大限度降低其开关节点振铃噪声而设计。 它为实现低栅极电荷、低RDS(on)、高速开关和体二极管反向恢复性能而优化。 • Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A\n• Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A\n• Advanced package and silicon combination for low rDS(on) and high efficiency\n• Next generation enhanced body diode technology, engineered for soft recovery\n• MSL1 robust package design\n• 100% ;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 60 V, 50 A, 3.4 m廓

文件：274.56 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 MOSFET 60 V, 18 A, 4.5 m廓

文件：262.29 Kbytes 页数：6 Pages

Fairchild

仙童半导体

CMOS 8-bit Single Chip Microcomputer

Description The CXP86540/86548/86560 are the CMOS 8-bit microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time-base timer, on-screen display function, I2C bus interface, PWM output, remote control reception circuit, HSYNC counter, watchdog timer, 32kH

文件：354.63 Kbytes 页数：24 Pages

SonySony Corporation

索尼

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：1.09091 Mbytes 页数：4 Pages

Bychip

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.1mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：353.96 Kbytes 页数：2 Pages

ISC

无锡固电