N 沟道，Power Trench® MOSFET，40V，49A，2.2mΩ

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 •VGS = 10V，ID = 25A时，Max rDS(on) = 2.2mΩ\n•VGS = 4.5V，ID = 21.7A时，最大rDS(on) = 3.0 mΩ\n•先进的封装和硅技术完美融合，实现了低rDS(on)\n•MSL1耐用封装设计\n•100%经过UIL测试\n•符合RoHS标准;

ONSEMI

安森美半导体

N-Channel Power Trench짰 MOSFET 40V, 49A, 2.2m廓

文件：323.1 Kbytes 页数：7 Pages

Fairchild

仙童半导体

80 Amp Rectifier 60 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：667.95 Kbytes 页数：3 Pages

MCC

ALARM CLOCK (CLOCK RADIO.ETC)

LM8460 ALARM CLOCK (CLOCK RADIO, ETC.) LM8471 RHYTHM PATTERN GENERATOR FOR ELECTRONIC ORGAN LM8523 COUNTER FOR TAPE RECORDER

文件：112.45 Kbytes 页数：1 Pages

SANYO

三洋

High-Capacity Wi-Fi 6E Tri-Band Access Point

Features • Qualcomm® IPQ8076A Quad-Core@2.2GHz Processor • Wi-Fi 6E Tri-Band Access Point • 4x4 MU-MIMO in 2.4GHz, 5GHz and 6GHz • Comply with IEEE 802.11a/b/g/n/ac/ax • 12 Internal Antennas for optimal Wi-Fi performance • BLE 5.1 for IoT management • Multi-speed GbE WAN port (1/2.5/5/10GbE

文件：595.36 Kbytes 页数：2 Pages

LANNER

立端科技