FDMS3604S中文资料安森美半导体数据手册PDF规格书

General Description

This device includes two specialized N−Channel MOSFETs in a

dual PQFN package. The switch node has been internally connected to

enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have

been designed to provide optimal power efficiency.

特性 Features

Q1: N−Channel

• Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A

• Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A

Q2: N−Channel

• Max rDS(on) = 2.6 m at VGS = 10 V, ID = 23 A

• Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses

• MOSFET Integration Enables Optimum Layout for Lower Circuit

Inductance and Reduced Switch Node Ringing

• This Device is Pb−Free and is RoHS Compliant

Applications

• Computing

• Communications

• General Purpose Point of Load

• Notebook VCORE