N-Channel Dual CoolTM PowerTrench짰 SyncFETTM 30 V, 49 A, 2.6 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：348.15 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 页数：2 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道双 CoolTM 56 PowerTrench® SyncFETTM

此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench®工艺生产。先进的硅技术和Dual Cool™封装技术完美融合，可在提供最小rDS(on)的同时通过极低的结至环境热阻保持卓越的开关性能。该器件具有高效单片肖特基体二极管的新增优点。 Dual Cool™ 顶侧冷却PQFN封装\n VGS = 10V，ID = 28A时，最大rDS(on) = 2.6mΩ\n 最大值 rDS(on) = 3.3 mΩ（VGS = 4.5 V, ID = 22 A 时）\n 通态电阻 rDS(on)极低的高性能技术\n SyncFET肖特基体二极管\n 符合 RoHS 标准;

ONSEMI

安森美半导体

Switching Application

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=22KΩ) • Complement to FJX4008R

文件：42.48 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Epitaxial Silicon Transistor

文件：258.26 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

NPN Epitaxial Silicon Transistor

文件：258.26 Kbytes 页数：7 Pages

ONSEMI

安森美半导体