N 沟道 Power Trench® MOSFET 60V，22A，3.2mΩ

该器件包括两个60 V N-沟道 MOSFET，采用双通道电源 (5 mm x 6mm) 封装。 HS 源极和 LS 漏极内部连接实现半桥/全桥，低源极电感封装、低 rDS(on)/Qg FOM 硅片。 • Q1： N沟道\n•最大 rDS(on) = 5.4 mΩ（VGS = 4.5 V、ID = 18 A）Q2： N沟道\n• 桥式拓扑初级端灵活布局的理想选择\n•100% 经过 UIL 测试\n• 开尔文高侧 MOSFET 驱动引脚配置能力\n•符合RoHS标准;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 SyncFETTM 25 V, 70 A, 1.8 m廓

文件：311.07 Kbytes 页数：8 Pages

Fairchild

仙童半导体

CLOCK CIRCUIT

FEATURES • LED direct drive by time-sharing (duplex) • Wide operating voltage range • Alarm on a 24-hour basis • Time format: 12-hour AM/PM and 24-hour • On-chip RC-oscillator for battery backup • 50Hz or 60Hz is usable as the reference frequency • Possible to automatically advance hours, m

文件：223.8 Kbytes 页数：6 Pages

INTEGRAL

Integral Corp.

DC/DC Power Switching Regulator Voltage feedforward mode

DC/DC Power Switching Regulator The ISL8560 is a step down DC/DC power switching regulator which accepts 9.0V to 60V input and provides a 2A output current. The output voltage can be set in the range between 1.21V and 55V by means of an external divider. The device uses an internal power DMOS tra

文件：1.02375 Mbytes 页数：17 Pages

Intersil