DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 页数：2 Pages

Fairchild

仙童半导体

N-Channel Dual CoolTM PowerTrench짰 MOSFET 60 V, 40 A, 6.3 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：282.91 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-Channel Power Trench짰 MOSFET 60 V, 22 A, 7.9 m廓

文件：258.81 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N 沟道，双 CoolTM 33 PowerTrench® MOSFET，60V，40A，6.3mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench®工艺生产。先进的硅技术和 Dual Cool™ 封装技术完美融合，可在提供最小 rDS(on)的同时通过极低的结至环境热阻保持卓越的开关性能。 •Dual Cool™ 顶侧冷却PQFN封装\n•最大值 rDS(on) = 6.3 mΩ（VGS = 10 V, ID = 17 A 时）\n•最大值 rDS(on) = 8.7 mΩ（VGS = 8 V, ID = 14.5 A 时）\n•通态电阻 rDS(on)极低的高性能技术\n•符合 RoHS 标准;

ONSEMI

安森美半导体

60V N 沟道 PowerTrench® MOSFET

该N沟道MOSFET专为使用同步或传统开关PWM控制器来改进总体效率和在最大程度上减少DC/DC转换器的开关结点振铃而设计。已经针对低栅极电荷、低rDS(on)、快速开关速度和软体二极管反向恢复性能进行了优化。 •VGS = 10 V，ID = 13.5 A时，最大rDS(on) = 7.9mΩ\n•VGS = 4.5 V，ID = 11.5 A时，最大rDS(on) = 11.7mΩ\n•薄型 - 最大1 mm，采用Power 33封装\n•100%经过UIL测试\n•符合RoHS标准;

ONSEMI

安森美半导体