DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 页数：2 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道，双 CoolTM 33 PowerTrench® MOSFET，30V，40A，2.2mΩ

此 N 沟道 MOSFET 采用飞兆先进的 PowerTrench® 工艺生产。先进的硅技术和 Dual CoolTM 封装技术完美融合，可在提供最小 rDS(on)的同时通过极低的结至环境热阻保持卓越的开关性能。 •Dual CoolÞ 顶侧冷却 PQFN 封装\n•最大 rDS(on) = 2.2 mΩ（VGS = 10 V、ID = 22 A）\n•VGS = 4.5 V，ID = 18 A时，Max rDS(on) = 3.3 mΩ\n•极低 rDS(on)的高性能技术\n•终端是符合 RoHS 标准的无铅产品;

ONSEMI

安森美半导体

N-Channel Power Trench짰 SyncFET 30 V, 20 A, 2.2 m廓

General Description The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an

文件：377.46 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET 30 V, 2.8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast swi

文件：296.18 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 SyncFET 30 V, 42 A, 2.4 m廓

General Description The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of a

文件：483.34 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司