FDMC6696P

P-Channel PowerTrench® MOSFET -20V, -75A, 4.9mΩ; • Max rDS(on) = 4.9 mΩ at VGS = -4.5 V, ID = -18 A\n• Max rDS(on) = 6.5 mΩ at VGS = -2.5 V, ID = -11 A\n• Max rDS(on) =16.4 mΩ at VGS = -1.8 V, ID = -9 A\n• High performance trench technology for extremely low rDS(on)\n• High power and current handling capability in a widely used surface mount package\n• Lead-free and RoHS Compliant\n;

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.

FDU6696

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features •50A,30

MAX6696

DualRemote/LocalTemperatureSensorswithSMBusSerialInterface

MAX6696AEE

DualRemote/LocalTemperatureSensorswithSMBusSerialInterface

MAX6696AEE

DualRemote/LocalTemperatureSensorswithSMBusSerialInterface

MAX6696AEE+

DualRemote/LocalTemperatureSensorswithSMBusSerialInterface

MAX6696YAEE

DualRemote/LocalTemperatureSensorswithSMBusSerialInterface

MAX6696YAEE+

DualRemote/LocalTemperatureSensorswithSMBusSerialInterface

ML6696

100BASE-XFiberPhysicalLayer

GENERALDESCRIPTION TheML6696implementsthecompletephysicallayeroftheFastEthernet100BASE-Xstandardforfibermedia.ThedeviceprovidestheMII(MediaIndependentInterface)forinterfacetoupper-layersilicon.TheML6696integratesthedataquantizerandtheLEDdriver,allowingthe

ML6696CH

100BASE-XFiberPhysicalLayer

GENERALDESCRIPTION TheML6696implementsthecompletephysicallayeroftheFastEthernet100BASE-Xstandardforfibermedia.ThedeviceprovidestheMII(MediaIndependentInterface)forinterfacetoupper-layersilicon.TheML6696integratesthedataquantizerandtheLEDdriver,allowingthe